Deposition and treatment of films for patterning

ABSTRACT

Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuing application of U.S. application Ser.No. 15/801,949, filed Nov. 2, 2017, which claims priority to U.S.Provisional Application No. 62/416,992, filed Nov. 3, 2016, the entiredisclosures of which are hereby incorporated by reference herein.

TECHNICAL FIELD

The present disclosure relates generally to methods of depositing andprocessing thin films. In particular, the disclosure relates toprocesses for filling trenches in substrates.

BACKGROUND

The semiconductor industry is rapidly developing chips with smaller andsmaller transistor dimensions to gain more functionality per unit area.As the dimensions of devices continue to shrink, so does the gap/spacebetween the devices, increasing the difficulty to physically isolate thedevices from one another. Filling in the high aspect ratiotrenches/spaces/gaps between devices which are often irregularly shapedwith high-quality dielectric materials is becoming an increasingchallenge to implementation with existing methods including gapfill,hardmasks and spacer applications. Selective deposition methodstypically include depositing a mask material on a substrate andpatterning the mask material to form a patterned mask. Regions of thesubstrate may then be exposed though the patterned mask after thepatterning of the mask. The patterned mask may be removed from thesubstrate to expose non-implanted regions of the substrate and amaterial may be selectively deposited on selected regions of thesubstrate.

There is a need in the art for new methods for chip designs with smallercritical dimensions. Additionally, there is an ongoing need for highquality metal oxide films for hardmasks and spacer applications, as wellas methods for forming patterned films on substrates.

SUMMARY

One or more embodiments of the disclosure are directed to processingmethods. One embodiment pertains to providing a substrate surface havingat least one trench, the at least one trench extending a depth from thesubstrate surface to a bottom surface, the at least one trench having awidth defined by a first sidewall and a second sidewall, selectivelydepositing a film material to form an initial film having a filmmaterial volume in the trench and not on the substrate surface, the filmmaterial having a Pilling-Bedworth ratio of greater than 2 and comprisesa material selected from the group consisting of Co, Cr, Fe, Mn, Nb, Os,Ta, U, W and V. The method of the one embodiment further includestreating the initial film to expand the film material volume to providean expanded film which extends beyond the substrate surface. Treatingthe initial film may include exposing the initial film to an oxidizingenvironment or a nitridating environment.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 shows a cross-sectional view of a substrate feature in accordancewith one or more embodiments of the disclosure;

FIGS. 2A and 2B show a cross-sectional schematic of a gapfill process inaccordance with one or more embodiments of the disclosure;

FIG. 3 shows a cross-sectional view of an oxidized film in accordancewith one or more embodiments of the disclosure;

FIG. 4 shows a cross-sectional view of an oxidized film in accordancewith one or more embodiments of the disclosure;

FIGS. 5A through 5C show a cross-sectional schematic of a process inaccordance with one or more embodiments of the disclosure;

FIGS. 6A through 6C show a cross-sectional schematic of a process inaccordance with one or more embodiments of the disclosure;

FIGS. 7A through 7D show a cross-sectional schematic of a process inaccordance with one or more embodiments of the disclosure; and

FIGS. 8A through 8B show a cross-sectional schematic of a process inaccordance with one or more embodiments of the disclosure.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/orbake the substrate surface. In addition to film processing directly onthe surface of the substrate itself, in the present disclosure, any ofthe film processing steps disclosed may also be performed on anunderlayer formed on the substrate as disclosed in more detail below,and the term “substrate surface” is intended to include such underlayeras the context indicates. Thus for example, where a film/layer orpartial film/layer has been deposited onto a substrate surface, theexposed surface of the newly deposited film/layer becomes the substratesurface.

One or more embodiments of the disclosure are directed to methods fordepositing metal oxide films for any conformal, nonconformal and/or lowto high aspect ratio gap/trench/void filling applications. Embodimentsof the disclosure advantageously provide methods of depositing a film(e.g., a metal oxide film) in high aspect ratio (AR) structures withsmall dimensions. Some embodiments of the disclosure advantageouslyprovide methods of filling gaps without formation of a seam in the gap.One or more embodiments of the disclosure advantageously provide methodsof forming self-aligned vias.

FIG. 1 shows a partial cross-sectional view of a substrate 100 with afeature 110. The Figures show substrates having a single feature forillustrative purposes; however, those skilled in the art will understandthat there can be more than one feature. The shape of the feature 110can be any suitable shape including, but not limited to, trenches andcylindrical vias. In specific embodiments, the feature 110 is a trench.As used in this regard, the term “feature” means any intentional surfaceirregularity. Suitable examples of features include, but are not limitedto trenches which have a top, two sidewalls and a bottom, peaks whichhave a top and two sidewalls extending upward from a surface and viaswhich have sidewalls extending down from a surface with an open bottom.Features or trenches can have any suitable aspect ratio (ratio of thedepth of the feature to the width of the feature). In some embodiments,the aspect ratio is greater than or equal to about 5:1, 10:1, 15:1,20:1, 25:1, 30:1, 35:1 or 40:1.

The substrate 100 has a substrate surface 120. The at least one feature110 forms an opening in the substrate surface 120. The feature 110extends from the substrate surface 120 to a depth D to a bottom surface112. The feature 110 has a first sidewall 114 and a second sidewall 116that define a width W of the feature 110. The open area formed by thesidewalls and bottom are also referred to as a gap.

With reference to FIGS. 2A through 2B, the substrate 100 is provided forprocessing. As used in this regard, the term “provided” means that thesubstrate is placed into a position or environment for furtherprocessing.

A film 130 is formed on the substrate surface 120 and the walls andbottom of the feature 110. The film 130 can be any suitable film formedby any suitable process including, but not limited to, chemical vapordeposition, plasma-enhanced chemical vapor deposition, atomic layerdeposition, plasma-enhanced atomic layer deposition and/or physicalvapor deposition. In some embodiments, the film 130 is formed by atomiclayer deposition or plasma-enhanced atomic layer deposition.

In some embodiments, the film 130 is a metal film or a metal-containingfilm. Suitable metal films include, but are not limited to metals havinga Pilling-Bedworth ratio greater than 2, greater than 2.25, or greaterthan 2.5. Pilling-Bedworth ratio refers to a ratio of a volume of theelementary cell of a metal oxide or metal nitride to the volume of theelementary cell of the corresponding metal from which the oxide ornitride is formed. The Pilling-Bedworth ratio is defined as theV_(oxide)/V_(metal) or V_(nitride)/V_(metal), where V is volume. Fordetermining the Pilling-Bedworth ratio of a metal oxide, V_(oxide)equals the molecular mass of the of the metal oxide multiplied by thedensity of the metal, and V_(metal) equals the number of atoms of metalper one molecule of the oxide multiplied by the atomic mass of the metalmultiplied by the density of the oxide. For determining thePilling-Bedworth ratio of a metal nitride, V_(nitride) equals themolecular mass of the of the metal nitride multiplied by the density ofthe metal, and V_(metal) equals the number of atoms of metal per onemolecule of the nitride multiplied by the atomic mass of the metalmultiplied by the density of the nitride. Examples of such films includeone or more of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y,Al, Sn, Cr, Os, U and/or La. In some embodiments, the metal is selectedfrom the group consisting of Co, Fe, Mn, Nb, Os, Ta, U, and V. In someembodiments, the metal has a Pilling-Bedworth ratio of greater than 2.5and is selected from the group consisting of Mo, Os, and V. In somespecific embodiments, the metal film comprises tungsten. In somespecific embodiments, the metal film excludes tungsten. Suitable metalcontaining films include derivatives of a metal film. Suitablederivatives of the metal film include, but are not limited to, nitride,boride, carbide, oxynitride, oxyboride, oxycarbide, carbonitride,borocarbide, boronitride, borocarbonitride, borooxycarbonitride,oxycarbonitride, borooxycarbide and borooxynitride. Those skilled in theart will understand that the metal film deposited may have anon-stoichiometric amount of atoms with the metal film. For example, afilm designated as WN may have different amounts of tungsten andnitrogen. The WN film may be, for example, 90 atomic % tungsten. The useof WN to describe a tungsten nitride film means that the film comprisestungsten and nitrogen atoms and should not be taken as limiting the filmto a specific composition. In some embodiments, the film consistsessentially of the designated atoms. For example, a film consistingessentially of WN means that the composition of the film is greater thanor equal to about 95%, 98% or 99% tungsten and nitrogen atoms. In someembodiments, the film 130 comprises tungsten. In some embodiments, thefilm 130 consists essentially of tungsten. In one or more embodiments,the film comprises titanium. In some embodiments, the film consistsessentially of titanium or titanium nitride.

In some embodiments, the film 130 forms conformally on the at least onefeature 110. As used herein, the term “conformal”, or “conformally”,refers to a layer that adheres to and uniformly covers exposed surfaceswith a thickness having a variation of less than 1% relative to theaverage thickness of the film. For example, a 1,000 Å thick film wouldhave less than 10 Å variations in thickness. This thickness andvariation includes edges, corners, sides, and the bottom of recesses.For example, a conformal layer deposited by ALD in various embodimentsof the disclosure would provide coverage over the deposited region ofessentially uniform thickness on complex surfaces.

In some embodiments, the film 130 is a continuous film. As used herein,the term “continuous” refers to a layer that covers an entire exposedsurface without gaps or bare spots that reveal material underlying thedeposited layer. A continuous layer may have gaps or bare spots with asurface area less than about 1% of the total surface area of the film.

In some embodiments, the film 130 is formed substantially seamlesslywithin the feature 110. In some embodiments, a seam 115 may be formedwithin the width W of the feature 110. The seam 115 can be any gap,space or void that forms between the walls 114, 116 of the feature 110

The film 130 can then be expanded to cause volumetric expansion to fillthe feature and allow the film 130 to extend from the feature. As shownin FIG. 2B, expanding the film causes a volumetric expansion of theoriginal film 130 to fill the feature. The expansion of the film 130 canbe in the range of about 10% to about 1000%, or in the range of about50% to about 800%, or in the range of about 100% to about 700%. In someembodiments, the film 130 expands by an amount greater than or equal toabout 150%, 200%, 250%, 300% or 350%. In some embodiments, the film 130expands an amount in the range of about 300% to about 400%. As shown inFIG. 2B, the expansion of the film 130 causes the seam 115 to becomefilled.

In some embodiments, the film 130 is expanded by exposure to anoxidizing agent or oxidizing conditions to convert the metal or metalcontaining film to a metal oxide film. The oxidizing agent can be anysuitable oxidizing agent including, but not limited to, O₂, O₃, N₂O,H₂O, H₂O₂, CO, CO₂, NH₃, N₂/Ar, N₂/He, N₂/Ar/He and combinationsthereof. In some embodiments, the oxidizing conditions comprise athermal oxidation, plasma enhanced oxidation, remote plasma oxidation,microwave and radio-frequency (e.g., ICP, CCP).

In some embodiments, the film 130 is expanded by exposure to anitridation agent or nitridation conditions to convert the metal ormetal containing film to a metal nitride film. The nitridation agent canbe any suitable nitridation agent including, but not limited to,ammonia, hydrazine, NO₂, N₂/Ar plasma, N₂/He plasma, N₂/Ar/He plasma andcombinations thereof. In some embodiments, the nitridation conditionscomprise a thermal nitridation, plasma enhanced nitridation, remoteplasma nitridation, microwave and radio-frequency (e.g., ICP, CCP).

In some embodiments, the film 130 is expanded by exposure to asiliciding agent or siliciding conditions to convert the metal or metalcontaining film to a metal silicide film. The siliciding agent can beany suitable siliciding agent including, but not limited to, silane,disilane, trisilane, tetrasilane, pentasilane, hexasilane, trimethylsilane, compounds with trimethylsilyl substituents and combinationsthereof. In some embodiments, the siliciding conditions comprise athermal siliciding, plasma enhanced siliciding, remote plasmasiliciding, microwave and radio-frequency (e.g., ICP, CCP).

In some embodiments, the film 130 is expanded by exposure to a germaniumagent or germaniciding conditions to convert the metal or metalcontaining film to a metal germanicide film. The germaniciding agent canbe any suitable germaniciding agent including, but not limited to,germane, digermane, trigermane, tetragermane, pentagermane, hexagermane,trimethyl germanium, compounds with trimethylgermanyl substituents andcombinations thereof. In some embodiments, the germaniciding conditionscomprise a thermal germaniciding, plasma enhanced germaniciding, remoteplasma germaniciding, microwave and radio-frequency (e.g., ICP, CCP).

Treating the film or expansion of the film 130 can occur at any suitabletemperature depending on, for example, the composition of the film andthe expanding agent. In some embodiments, the film expansion occurs at atemperature in the range of about 25° C. to about 1100° C. In someembodiments, expansion occurs at a temperature greater than or equal toabout 250° C., 300° C., 350° C., 400° C., 450° C., 500° C. or 550° C.

In some embodiments, the film 130 is deposited to a thickness in therange of about 25 Å to about 200 Å, or in the range of about 50 Å toabout 150 Å. In one or more embodiments, the film 130 is deposited to athickness of about 50 Å and there is substantially no seam formed in thefilm. The formation of the seam occurs where the thickness of the filmcloses on the top part of the feature 110 before the feature is filledwith the film. In some embodiments, the substrate surface has a filmwith a seam between the sidewalls of the at least one feature. As usedin this regard, the term “between” means that there is some film oneither side of the seam between the seam and the sidewall of thefeature. The seam is not limited to being exactly in the center of thesidewalls.

During expansion of the film 130 by, for example, oxidation, a gap 140is formed on top of the substrate surface 120. The gap 140 can havecontents that match the oxidation environment or can be of a differentcomposition. For example, an oxidation environment using nitrogen plasmamay form a gap 140 with a nitrogen environment. The expansion agent canhave effect the size and content of the gap 140. For example, if anitridation agent is used to expand the film, the gap 140 may includenitrogen.

As shown in FIG. 3, during expansion, the fidelity of the feature shapeis maintained on the top of the feature so that the film 130 growsstraight up from the feature 110. As used in this regard, “straight up”means that the film forms a surface 144 around the gap 140 and that theportion of the surface 144 adjacent the feature sidewall 114 issubstantially coplanar with the sidewall 114. A surface 144 is coplanarwith the sidewall 114 where the angle formed at the junction of thesidewall 114 and the surface 144 is ±10°. Expansion of this sort wasexpected to grow isotropically to form mushroom shaped top. Theexpansion of the film 130 to form a straight segment 142 was unexpected.

In some embodiments, the film 130 is doped with a dopant prior toexpansion. The dopant can be incorporated into the film 130 at the sametime as the formation of the film 130 or in a separate processsequentially with the film deposition. For example, depositing the film130 may occur followed by doping the film 130 with the dopant in aseparate process in either the same process chamber or a differentprocess chamber. In some embodiments, the deposition of the film 130occurs with the doping in a single process. For example, the filmprecursor and dopant can be co-flowed into the processing chamber toform the film 130.

Some embodiments include an optional treatment process. The treatmentprocess treats the film 130 to improve some parameter of the film. Insome embodiments, the treatment process comprises annealing the film. Insome embodiments, treatment can be performed by in-situ anneal in thesame process chamber used for deposition and/or reduction. Suitableannealing processes include, but are not limited to, rapid thermalprocessing (RTP) or rapid thermal anneal (RTA), spike anneal, or UVcure, or e-beam cure and/or laser anneal. The anneal temperature can bein the range of about 500° C. to 900° C. The composition of theenvironment during anneal may include one or more of H2, Ar, He, N2,NH3, SiH4, etc. The pressure during anneal can be in the range of about100 mTorr to about 1 atm.

While processes may be referred to as oxidation, those skilled in theart will understand that the disclosure is not limited to oxidationreactions to expand the film. The use of the oxidation reaction todescribe various embodiments is for convenience only and is not limitingof the scope of the disclosure. Referring to FIG. 4, in some embodimentsthere is a greater amount of oxidation at the top portion (the straightsegment 142) than at the bottom portion 131 of the feature 110. In someembodiments, there is little or no oxidation of the film 130 at thebottom portion 131 of the feature 110. FIGS. 5A through 5C show a methodof depositing a film in a bottom of a feature 110 m for example, atrench. The film 130 is deposited by any suitable technique. Forexample, in FIG. 5A a tungsten film can be deposited on the substrate byatomic layer deposition. The film 130 in FIG. 5B has been oxidized andexpanded to fill the feature 110. The top portion 142 of the film 130comprises an oxide of the deposited metal (e.g., tungsten oxide) and thebottom portion 131 of the film 130 remains unoxidized (e.g., tungstenmetal). The difference between the top portion 142 and the bottomportion 131 can be used to selectively etch material from the substrate.As shown in FIG. 5C, if the film 130 is deposited to an etch processselective for oxides, the oxide film at the top portion 142 can beremoved leaving the metal film at the bottom portion 131.

FIGS. 6A through 6C show another embodiment of the disclosure. In FIG.6A, a substrate 100 with at least one feature (for example, a trench)110 is shown. A metal film 130 is deposited in the bottom of the feature110, as shown in FIG. 6B. The film 130 can be oxidized, in FIG. 6C, sothat the film expands to fill the feature 110.

FIGS. 7A through 7D show another embodiment of the disclosure in which aself-aligned via is formed. In FIG. 7A, a substrate with an oxidizedfilm 130 is provided. A polishing or etch process can be performed toremove the top of the film 130 from the surface 120 of the substrate100, as shown in FIG. 7B. The film 130 remains within and filling thefeatures 110. As shown in FIG. 7C, the film 130 can then be oxidized tocause upward growth the film 130. The sides of the film 130 remainsubstantially coplanar with the sides of the feature 110 so that thereare pillars extending from the features 110. A material layer 160 isdeposited on the surface 120 of the substrate 100. As shown in FIG. 7D,the film 130 can be removed (e.g., by etching) to leave the features 110with the material layer 160 aligned on top of the features 110.

Referring now to FIGS. 8A and 8B, another embodiment in which aprocessing method includes providing substrate 100 having a surface 110including at least one feature 120 in the form of a trench, extending adepth “D” from the substrate surface 110 to a bottom surface 112. Thetrench 120, has a width “W” defined by a first sidewall 114 and a secondsidewall 116. According to the embodiment shown, the processing methodincludes selectively depositing a film material to form an initial film130 having a film material volume in the trench 120 and not on thesubstrate surface 110, the film material having a Pilling-Bedworth ratioof greater than 2 and comprises a material selected from the groupconsisting of Co, Cr, Fe, Mn, Nb, Os, Ta, U, W and V. The processingmethod further comprises treating the initial film 130 to expand thefilm material volume to provide an expanded film 140 which extendsbeyond the substrate surface 110. In one embodiment, the initial film130, fills at least 10% of the volume of the trench. In otherembodiments, the initial film 130 fills at least 15%, 20%, 25%, 30%,35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100%of the volume of the trench. In the embodiment shown, the initial filmextends from the first sidewall 114 to the second sidewall. In one ormore embodiments, treating the initial film results in the film volumeincreasing by at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%,100%, 150%, 200%, 250%, 300%, 350% or 400%. As shown in FIG. 8B, theexpanded film 140 forms a pillar 150 extending from the trench 120. Whena plurality of trenches 120 (not shown) are filled with a metal having aPilling-Bedworth ratio exceeding about 2 and treated to expand theinitial film volume, a plurality of pillars 150 can be formed to providea pattern without using a mask.

In a specific embodiment, the film material is selected from the groupconsisting of Co, Fe, Mn, Nb, Os, Ta, U, and V. In one embodiment,treating the initial film comprises exposing the initial film to anoxidizing environment, In embodiments in which treating the initial filmcomprises exposing the initial film to an oxidizing environment theexpanded film comprises a material selected from the group consisting ofCoO, Fe₂O₃, Fe₃O₄, MnO₂, Mn₂O₃, Mn₃O₄, MoO₃, Nb₂O₅, Ta₂O₅, OsO₂, UO₂,and V₂O₅.

In some embodiments, the film material has a Pilling-Bedworth ratio ofgreater than 2.5 and is selected from the group consisting of Mo, Os,and V. In some embodiments in which the, the film material has aPilling-Bedworth ratio of greater than 2.5 and is selected from thegroup consisting of Mo, Os, and V treating the initial film comprisesexposing the initial film to an oxidizing environment. In suchembodiments, the expanded film comprises a material selected from thegroup consisting of MoO₃, OsO₂ and V₂O₅.

In some embodiments, treating the initial film comprises exposing theinitial film to a nitridating environment. In embodiments in which theinitial film is exposed to a nitridating environment, the film materialis selected from the group consisting of Cr, Mo and Os. In suchembodiments, the expanded film comprises a material selected from thegroup consisting of CrN₂, MoN₂ and OsN₂. In other embodiments in whichnitridating the initial film occurs, the Pilling Bedworth ratio isgreater than 1.5, and the film material for the initial film is a metalselected from the group consisting of Cr, Mo, OS, Co, Cu, Nb, NI, Rh,Sr, Ta, Ru and W.

In some embodiments, treating the initial film comprises exposing theinitial film to an oxidizing agent comprising one or more of O₂, O₃,N₂O, H₂O, H₂O₂, CO, CO₂, NH₃, N₂/Ar, N₂/He or N₂/Ar/He and/or anitridation agent comprising one or more of ammonia, hydrazine, NO₂ ornitrogen plasma.

In some embodiments, treating the initial film occurs at a temperatureless than about 300° C. or less than 450° C.

Another embodiment pertains to a processing method comprising providinga substrate surface having at least one trench, the at least one trenchextending a depth from the substrate surface to a bottom surface, the atleast one trench having a width defined by a first sidewall and a secondsidewall; selectively depositing a film material to form an initial filmhaving a film material volume in the trench and not on the substratesurface, the film material having a Pilling-Bedworth ratio of greaterthan 2 and comprising a material selected from the group consisting ofCo, Cr, Fe, Mn, Nb, Os, Ta, U, W and V; and treating the initial film toform a nitride of a metal selected from the group consisting of Co, Cr,Fe, Mn, Nb, Os, Ta, U, W or V to expand the film material volume toprovide an expanded film which extends beyond the substrate surface. Ina specific embodiment, the film material comprises a metal selected fromthe group consisting of Cr, Mo and Os, and the expanded film comprises amaterial selected from the group consisting of CrN₂, MoN₂ and OsN₂.

Another embodiment pertains to a processing method comprising providinga substrate surface having at least one trench, the at least one trenchextending a depth from the substrate surface to a bottom surface, the atleast one trench having a width defined by a first sidewall and a secondsidewall; selectively depositing a film material to form an initial filmhaving a film material volume in the trench and not on the substratesurface, the film material having a Pilling-Bedworth ratio of greaterthan 2 and comprising a material selected from the group consisting ofCo, Cr, Fe, Mn, Nb, Os, Ta, U, and V; and treating the initial film toform a oxide of a metal selected from the group consisting of Co, Cr,Fe, Mn, Nb, Os, Ta, U, or V to expand the film material volume toprovide an expanded film which extends beyond the substrate surface. Inspecific embodiments, the film material comprises a metal selected fromthe group consisting of Co, Fe, Mn, Nb, Os, Ta, U, and V, and theexpanded film comprises a material selected from the group consisting ofMoO₃, OsO₂ and V₂O₅. In a specific embodiment, treating the initial filmoccurs at a temperature greater than about 400° C. In a specificembodiment, treating the initial film occurs at a temperature greaterthan about 350° C.

The oxidation reactions of the embodiments shown in FIGS. 4 through 8Bcan be nitridation reactions, siliciding reactions or germanicidingreactions. Those skilled in the art will understand that other processesand reactions may be used to expand the film within the feature or causestraight up growth of the film.

According to one or more embodiments, the substrate is subjected toprocessing prior to and/or after forming the layer. This processing canbe performed in the same chamber or in one or more separate processingchambers. In some embodiments, the substrate is moved from the firstchamber to a separate, second chamber for further processing. Thesubstrate can be moved directly from the first chamber to the separateprocessing chamber, or it can be moved from the first chamber to one ormore transfer chambers, and then moved to the separate processingchamber. Accordingly, the processing apparatus may comprise multiplechambers in communication with a transfer station. An apparatus of thissort may be referred to as a “cluster tool” or “clustered system,” andthe like.

Generally, a cluster tool is a modular system comprising multiplechambers which perform various functions including substratecenter-finding and orientation, degassing, annealing, deposition and/oretching. According to one or more embodiments, a cluster tool includesat least a first chamber and a central transfer chamber. The centraltransfer chamber may house a robot that can shuttle substrates betweenand among processing chambers and load lock chambers. The transferchamber is typically maintained at a vacuum condition and provides anintermediate stage for shuttling substrates from one chamber to anotherand/or to a load lock chamber positioned at a front end of the clustertool. Two well-known cluster tools which may be adapted for the presentinvention are the Centura® and the Endura®, both available from AppliedMaterials, Inc., of Santa Clara, Calif. However, the exact arrangementand combination of chambers may be altered for purposes of performingspecific steps of a process as described herein. Other processingchambers which may be used include, but are not limited to, cyclicallayer deposition (CLD), atomic layer deposition (ALD), chemical vapordeposition (CVD), physical vapor deposition (PVD), etch, pre-clean,chemical clean, thermal treatment such as RTP, plasma nitridation,degas, orientation, hydroxylation and other substrate processes. Bycarrying out processes in a chamber on a cluster tool, surfacecontamination of the substrate with atmospheric impurities can beavoided without oxidation prior to depositing a subsequent film.

According to one or more embodiments, the substrate is continuouslyunder vacuum or “load lock” conditions, and is not exposed to ambientair when being moved from one chamber to the next. The transfer chambersare thus under vacuum and are “pumped down” under vacuum pressure. Inertgases may be present in the processing chambers or the transferchambers. In some embodiments, an inert gas is used as a purge gas toremove some or all of the reactants. According to one or moreembodiments, a purge gas is injected at the exit of the depositionchamber to prevent reactants from moving from the deposition chamber tothe transfer chamber and/or additional processing chamber. Thus, theflow of inert gas forms a curtain at the exit of the chamber.

The substrate can be processed in single substrate deposition chambers,where a single substrate is loaded, processed and unloaded beforeanother substrate is processed. The substrate can also be processed in acontinuous manner, similar to a conveyer system, in which multiplesubstrate are individually loaded into a first part of the chamber, movethrough the chamber and are unloaded from a second part of the chamber.The shape of the chamber and associated conveyer system can form astraight path or curved path. Additionally, the processing chamber maybe a carousel in which multiple substrates are moved about a centralaxis and are exposed to deposition, etch, annealing, cleaning, etc.processes throughout the carousel path.

During processing, the substrate can be heated or cooled. Such heatingor cooling can be accomplished by any suitable means including, but notlimited to, changing the temperature of the substrate support andflowing heated or cooled gases to the substrate surface. In someembodiments, the substrate support includes a heater/cooler which can becontrolled to change the substrate temperature conductively. In one ormore embodiments, the gases (either reactive gases or inert gases) beingemployed are heated or cooled to locally change the substratetemperature. In some embodiments, a heater/cooler is positioned withinthe chamber adjacent the substrate surface to convectively change thesubstrate temperature.

The substrate can also be stationary or rotated during processing. Arotating substrate can be rotated continuously or in discreet steps. Forexample, a substrate may be rotated throughout the entire process, orthe substrate can be rotated by a small amount between exposures todifferent reactive or purge gases. Rotating the substrate duringprocessing (either continuously or in steps) may help produce a moreuniform deposition or etch by minimizing the effect of, for example,local variability in gas flow geometries.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe disclosure. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the disclosure.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the disclosure herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent disclosure. It will be apparent to those skilled in the art thatvarious modifications and variations can be made to the method andapparatus of the present disclosure without departing from the spiritand scope of the disclosure. Thus, it is intended that the presentdisclosure include modifications and variations that are within thescope of the appended claims and their equivalents.

What is claimed is:
 1. A processing method comprising: providing asubstrate surface having at least one trench, the at least one trenchextending a depth from the substrate surface to a bottom surface, the atleast one trench having a width defined by a first sidewall and a secondsidewall; selectively depositing a film material to form an initial filmhaving a film material volume in the trench and not on the substratesurface, the film material having a Pilling-Bedworth ratio of greaterthan 2 and comprising a material selected from the group consisting ofCo, Cr, Fe, Mn, Nb, Os, Ta, U, W and V; and treating the initial film toexpand the film material volume to provide an expanded film whichextends beyond the substrate surface.
 2. The method of claim 1, whereinthe initial film is conformal.
 3. The method of claim 1, wherein theinitial film is continuous.
 4. The method of claim 1, wherein treatingthe initial film occurs at a temperature less than 450° C.
 5. The methodof claim 1, wherein treating the initial film comprises exposing theinitial film to an oxidizing environment.
 6. The method of claim 5,wherein the oxidizing environment comprises one or more of O₂, O₃, N₂O,H₂O, H₂O₂, CO or CO₂.
 7. The method of claim 5, wherein the expandedfilm comprises a material selected from the group consisting of CoO,Fe₂O₃, Fe₃O₄, MnO₂, Mn₂O₃, Mn₃O₄, MoO₃, Nb₂O₅, Ta₂O₅, OsO₂, UO₂ andV₂O₅.
 8. The method of claim 1, wherein the film material has aPilling-Bedworth ratio of greater than 2.5 and is selected from thegroup consisting of Mo, Os and V.
 9. The method of claim 8, wherein theexpanded film comprises a material selected from the group consisting ofMoO₃, OsO₂ and V₂O₅.
 10. The method of claim 1, wherein treating theinitial film comprises exposing the initial film to a nitridatingenvironment.
 11. The method of claim 10, wherein the nitridatingenvironment comprises one or more of ammonia, hydrazine, NO₂, nitrogenplasma, N₂/Ar plasma, N₂/He plasma, and N₂/Ar/He plasma.
 12. The methodof claim 1, wherein treating the initial film comprises exposing theinitial film to a siliciding environment.
 13. The method of claim 12,wherein the siliciding environment comprises one or more of silane,disilane, trisilane, tetrasilane, pentasilane, hexasilane, trimethylsilane, and compounds with trimethylsilyl substituents.
 14. The methodof claim 1, wherein treating the initial film comprises exposing theinitial film to a germaniciding environment.
 15. The method of claim 14,wherein the germaniciding environment comprises one or more of germane,digermane, trigermane, tetragermane, pentagermane, hexagermane,trimethyl germanium, and compounds with trimethylgermanyl sub stituents.16. The method of claim 1, wherein the expanded film extends straight upfrom the trench.
 17. A processing method comprising: providing asubstrate surface having at least one trench, the at least one trenchextending a depth from the substrate surface to a bottom surface, the atleast one trench having a width defined by a first sidewall and a secondsidewall; selectively depositing a film material to form an initial filmhaving a film material volume in the trench and not on the substratesurface, the film material having a Pilling-Bedworth ratio of greaterthan 2 and comprising a material selected from the group consisting ofCo, Cr, Fe, Mn, Nb, Os, Ta, U, W and V; and treating the initial film toform a silicide of a metal selected from the group consisting of Co, Cr,Fe, Mn, Nb, Os, Ta, U, W or V to expand the film material volume toprovide an expanded film which extends straight up beyond the substratesurface.
 18. The method of claim 17, wherein treating the initial filmcomprises exposing the initial film to one or more of silane, disilane,trisilane, tetrasilane, pentasilane, hexasilane, trimethyl silane, andcompounds with trimethylsilyl substituents.
 19. A processing methodcomprising: providing a substrate surface having at least one trench,the at least one trench extending a depth from the substrate surface toa bottom surface, the at least one trench having a width defined by afirst sidewall and a second sidewall; selectively depositing a filmmaterial to form an initial film having a film material volume in thetrench and not on the substrate surface, the film material having aPilling-Bedworth ratio of greater than 2 and comprising a materialselected from the group consisting of Co, Cr, Fe, Mn, Nb, Os, Ta, U, Wand V; and treating the initial film to form a germanide of a metalselected from the group consisting of Co, Cr, Fe, Mn, Nb, Os, Ta, U, orV to expand the film material volume to provide an expanded film whichextends straight up beyond the substrate surface.
 20. The method ofclaim 19, wherein treating the initial film comprises exposing theinitial film to one or more of germane, digermane, trigermane,tetragermane, pentagermane, hexagermane, trimethyl germanium, andcompounds with trimethylgermanyl substituents.